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The working principle of the pressure touch chip is based on pressure sensing technology, which can sense the pressure exerted by the user on the device. The pressure touch chip detects external pressure and enables interactive operations between users and devices. This technology is widely used in devices such as headphones, smartphones, and tablets, improving user experience and operational convenience.
| Inductive and Capacitive Hybrid ROIC (FS-H-PKG) | |
| Project | Describe |
|---|---|
| VCC Voltage | 3.0~3.6V |
| Sensor Data Resolution | 14 bits (including polarity bits) |
| Channel | Inductive 8-channel and Capacitive 8-channel |
| Inductive 4-channel and Capacitive 4-channel (reduced version) | |
| Embedded Algorithms | Automatic/Manual Calibration of Initial Conditions Individual Gain Control Basic drift algorithm average and sliding average used to compensate for sensor distortion and temperature changes |
| IDD in Standby Mode | ~100μA |
| Interface | I²C |
| Packaging Type | WLCSP or Chip |
| Inductive and Capacitive Hybrid ROIC (FS-H-PKG) | |
| Project | Describe |
|---|---|
| VCC Voltage | 3.0~3.6V |
| Sensor Data Resolution | 17 bits (including polarity bits) |
| Channels | Strain gauges with 4 channels and capacitors with 4 channels |
| Embedded Algorithms | Automatic/manual calibration of initial conditions Individual Gain Control Basic drift algorithm average and sliding average used to compensate for sensor distortion and temperature changes |
| IDD in Standby Mode | ~50μA |
| Interface | I²C |
| Packaging Type | WLCSP or Chip |
Application Scenarios
Application Scenarios
| Inductive and Capacitive Hybrid ROIC (FS-H-PKG) | |||
| Distinguish | Personnel | Resume | Years of Service |
|---|---|---|---|
| CTO | JHL | PhD in Electronics from Seoul National University; Samsung Display IC Design | 26 years |
| Front-end | SJP | Electronic Engineering major at Hongik University; KAIST/TMTLSIIC Design | 23 years |
| MNK | Electronic Engineering major at Jianguo University; SK/DBHotek IC Design | 30 years | |
| SW | Electronic Engineering major at Sungkyunkwan University; Samsung Electronics/TMTLS/ Siliconfle lC Design | 30 years | |
| JSL | Electronic Engineering major at Sungkyunkwan University; GCT/DBHitek/MagnachipIC Design | 10 years | |
| HSK | Electronic Engineering major at Xijiang University; Siliconfile/Lsl/Asicland SoC Design | 5 years | |
| JHJ | Electronic Engineering major at Central University; Harman simulation design | 27 years | |
| Back-end | MKL | Electronic Engineering major at Hongik University; SemiSolution/SMS/TaliIC development | 40 years |
| DWL | Department of Electronics, Qingbei University; Samsung Electronics/LG Electronics/PinelC Development and Layout Design | 8 years | |
| SHK | Electronic Engineering major at Yuanguang University; ALPS Layout Design | 25 years | |
| aApplied Technology | JKL | Department of Electronic Engineering, Seoul City University; LXsemicon/DBHotek/JCETIC development | 20 years |
| BKP | Electronics major at Tan Guo University; Wojin/GCT development | 15 years | |
| HU | Knowing the University of Information and Communication Engineering; UBSmart Development and Testing | 4 years | |
| HKS | Electronic Engineering major at Chongshi University; TO21COMMS H/W] | 4 years | |
